http://iet.metastore.ingenta.com
1887

Abrupt high hole concentration profiles in GaAs by Zn+P dual implantation

Abrupt high hole concentration profiles in GaAs by Zn+P dual implantation

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In the letter we report that through the use of rapid thermal annealing (RTA) and the coimplantation of phosphorus an effective way of preventing the in-diffusion of zinc has been achieved. We have observed that the electrical activation characteristics of the Zn-implanted samples have been modified after the coimplantation of phosphorus. Furthermore, abrupt electrical profiles with hole concentrations of the order of 6×1019/cm3 have been achieved after annealing at 850°C for 30s.

References

    1. 1)
      • N.J. Barrett , J.D. Grange , B.J. Sealy , K.G. Stephens . Annealing of zinc implanted GaAs. J. Appl. Phys. , 12
    2. 2)
      • N.J. Barrett , J.D. Grange , B.J. Sealy , K.G. Stephens . Annealing of selenium implanted GaAs. J. Appl. Phys. , 12
    3. 3)
      • D.E. Davies , P.J. McNally . Zn-implanted GaAs with minimized annealing redistribution. IEEE Electron Dev. Lett.
    4. 4)
      • T. Ambridge , R. Heckingbottom . Ion implantation in compound semiconductors-an approach based on solid state theory. Radiat. Eff.
    5. 5)
      • J. Kashara , K. Taira , Y. Kato , M. Arai , N. Wantanabe . Formation of P+-layers in GaAs by dual implantation of Zn and As. J pn. J. Appl. Phys. , 6
    6. 6)
      • K.K. Patel , B.J. Sealy . Rapid thermal annealing of Mg+ + As+ dual implants in GaAs. Appl. Phys. Lett. , 21
    7. 7)
      • K. Morizuka , T. Nozu , M. Azuma . Collector-top GaAs/AlGaAs heterojunction bipolar transistors in high-speed digital Ics. Electron. Lett. , 315 - 316
    8. 8)
      • R. Gwilliam , R. Bensalem , B.J. Sealy , K.G. Stephens . Transient annealing for the production of n+ contact layers in GaAs. Physica B
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19890580
Loading

Related content

content/journals/10.1049/el_19890580
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address