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Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor

Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor

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© The Institution of Electrical Engineers
Published

Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.

Inspec keywords: gallium arsenide; heterojunction bipolar transistors; semiconductor device models; III-V semiconductors; aluminium compounds; relaxation

Other keywords: numerical simulation; HBT; device performance; heterojunction bipolar transistor; AlGaAs-GaAs; cutoff frequency; III-V semiconductors; energy relaxation time; energy transport model

Subjects: Bipolar transistors; Semiconductor device modelling, equivalent circuits, design and testing

References

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      • P.I. Rockett . Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors. IEEE Trans. Electron Devices , 1573 - 1579
    2. 2)
      • T. Ishibashi , Y. Yamauchi . A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure. IEEE Trans. Electron Devices , 401 - 404
    3. 3)
      • K. Horio , H. Yanai . Numerical analysis of energy transport effects in an AlGaAs/GaAs heterojunction bipolar transistor. Trans. IECE Japan , 279 - 282
    4. 4)
      • K. Tomizawa , Y. Awano , N. Hashizume . Monte Carlo simulation of AlGaAs/GaAs heterojuntion bipolar transistor. IEEE Electron Device Lett. , 362 - 364
    5. 5)
      • Ishibashi, T., Ito, H., Sugeta, T.: `Luminescence of hot carrier in the base of an AlGaAs/GaAs HBT.', Inst. Phys. Conf. Ser., 1985, 74, p. 593–598.
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