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94 GHz low-noise HEMT

94 GHz low-noise HEMT

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© The Institution of Electrical Engineers
Published

A high-performance 0.lμm gate-length, AlGaAs/GaInAs/GaAs pseudomorphic high electron mobility transistor has been successfully developed. The device exhibits a minimum noise figure as low as 3.0 dB with an associated gain of 5.1 dB at 94 GHz. This is the first low-noise operation of transistors at 94 GHz.

Inspec keywords: III-V semiconductors; solid-state microwave devices; gallium arsenide; aluminium compounds; indium compounds; high electron mobility transistors

Other keywords: noise figure; low-noise operation; 5.1 dB; gain; 3.0 dB; 94 GHz; pseudomorphic high electron mobility transistor; 0.1 micron; III-V semiconductors; AlGaAs-GaInAs-GaAs

Subjects: II-VI and III-V semiconductors; Other field effect devices

References

    1. 1)
      • Duh, K.H.G., Chao, P.C., Smith, P.M., Lester, L.F., Lee, B.R., Ballingall, J.M.: `Millimeter-wave low-noise HEMT amplifiers.', IEEE MTT-S Dig., 1988, p. 923.
    2. 2)
      • Berenz, J.J., Nakano, K., Weller, K.P.: `Low-noise high electron mobility transistors', IEEE Monolithic Circuits Symp. Dig., 1984, p. 83.
    3. 3)
      • Smith, P.M., Chao, P.C., Lester, L.F., Smith, R.P., Lee, B.R., Ferguson, D.W., Ballingall, J.M., Duh, K.H.G.: `InGaAs pseudomorphic HEMTS FOR millimeter-wave power applications', IEEE MTT-S Dig., 1988, p. 927.
    4. 4)
      • P.C. Chao , R.C. Tiberio , K.H.G. Duh , P.M. Smith , J.M. Ballingall , L.F. Lester , B.R. Lee , A.A. Jabra , G.G. Gifford . 0.1 μm gate-length pseudomorphic HEMTs.. IEEE Electron Device Lett.
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