© The Institution of Electrical Engineers
A computational technique to determine the electrical properties of SAW-semiconductor devices is presented. The contribution of the acoustic waves is reduced to a surface charge at the interface between the piezoelectric layer and the semiconducting substrate. In this way the electrical problem can be solved with numerical techniques commonly used for device modelling.
References
-
-
1)
-
Haartsen, J.C., Venema, A.: `The barrier-modulated tap: a new SAW detection method in silicon', To be published in IEEE Ultrasonics Symp. Proc., 1988.
-
2)
-
Augustine, F.L., Schwartz, R.J., Gunshor, R.L.: `Experimental observation of charge transfer by surface acoustic waves in a monolithic metal/ZnO/SiO', IEEE Ultrasonics Symp. Proc., 1981, p. 769–773.
-
3)
-
A. Venema ,
R.F. Humphryes ,
J.J.M. Dekker
.
Calculations of δ−/ν for thin flim SAW transducers on a nonzero conductive silicon substrate.
Electron. Lett.
,
647 -
649
-
4)
-
A. Venema ,
J.J.M. Dekker ,
R.F. Humphreys
.
Static capacitance calculations for a surface acoustic wave interdigital transducer in multilayered media.
IEEE Trans.
,
294 -
297
-
5)
-
W.L. Engle ,
H.K. Dirks ,
B. Meinerzhagen
.
Device modeling.
Proc. IEEE
,
10 -
33
-
6)
-
G.S. Kino ,
R.S. Wagers
.
Theory of interdigital couplers on nonpiezoelectric substrates.
J. Appl. Phys.
,
1480 -
1488
-
7)
-
W.J. Ghijsen ,
P.M. van den Berg
.
A rigorous computational technique for the acousto-electric field problem in SAW devices.
IEEE Trans.
,
375 -
384
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