Zinc-doping of (511)A layers of (Al0.6Ga0.4)0.5In0.5P grown by atmospheric metalorganic vapour phase epitaxy

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Zinc-doping of (511)A layers of (Al0.6Ga0.4)0.5In0.5P grown by atmospheric metalorganic vapour phase epitaxy

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Zinc-doping into (511)A (AI0.6Ga0.4)0.5In0.5P layers using atmospheric metalorganic vapour phase epitaxy is investigated and compared to that into (100) layers. The doping efficiency is an order of magnitude higher for (511)A layers. Saturation in hole concentration begins at around 15×1018cm−3 in (511)A crystals, but at 4×1017cm−3 in (100) crystals.

Inspec keywords: semiconductor doping; zinc; semiconductor epitaxial layers; gallium compounds; aluminium compounds; indium compounds; vapour phase epitaxial growth

Other keywords: saturation; atmospheric metalorganic vapour phase epitaxy; doping efficiency; hole concentration

Subjects: II-VI and III-V semiconductors; Epitaxial growth; Semiconductor doping

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