Zinc-doping of (511)A layers of (Al0.6Ga0.4)0.5In0.5P grown by atmospheric metalorganic vapour phase epitaxy

Zinc-doping of (511)A layers of (Al0.6Ga0.4)0.5In0.5P grown by atmospheric metalorganic vapour phase epitaxy

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Zinc-doping into (511)A (AI0.6Ga0.4)0.5In0.5P layers using atmospheric metalorganic vapour phase epitaxy is investigated and compared to that into (100) layers. The doping efficiency is an order of magnitude higher for (511)A layers. Saturation in hole concentration begins at around 15×1018cm−3 in (511)A crystals, but at 4×1017cm−3 in (100) crystals.


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