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Self-aligned index-guided multiple quantum well laser by sulphur diffusion-induced disordering

Self-aligned index-guided multiple quantum well laser by sulphur diffusion-induced disordering

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© The Institution of Electrical Engineers
Published

A simple self-aligned fabrication process for sulphur-diffusion disordered AlGaAs/GaAs multiple quantum well (MQW) lasers is described that produces refractive index guiding. However, the gradual profile of sulphur diffusion causes a separation between the disordered/nondisordered interface and the pn junction which leads to a large lateral optical loss of the index-guided mode.

Inspec keywords: gallium arsenide; semiconductor doping; III-V semiconductors; semiconductor junction lasers; aluminium compounds; sulphur; diffusion in solids

Other keywords: index-guided multiple quantum well laser; index-guided mode; MQW lasers; refractive index guiding; self-aligned fabrication process; pn junction; single mask process; disordered/nondisordered interface; disordered laser technology; gradual profile; semiconductors; AlGaAs:S-GaAs; S diffusion induced disordering; lateral optical loss

Subjects: II-VI and III-V semiconductors; Semiconductor doping; Semiconductor lasers

References

    1. 1)
      • C. Shieh , J. Mantz , C. Colvard , K. Alavi , R. Engelmann , Z. Smith , S. Wagner . Study of impurity induced disordering in AlGaAs/GaAs multi-quantum well structures by photothermal deflection spectroscopy and photoluminescence. Superlattices & Microstruct. , 597 - 602
    2. 2)
      • M.E. Greiner , J.F. Gibbons . Diffusion and electrical properties of silicon doped gallium arsenide. J. Appl. Phys. , 5181 - 5187
    3. 3)
      • D.G. Deppe , W.E. Plano , J.M. Dallesasse , D.C. Hall , L.J. Guido , N. Holonyak . Buried heterostructure AlGaAs-GaAs quantum well lasers by Ge diffusion from the vapour. Appl. Phys. Lett. , 825 - 827
    4. 4)
      • K. Meehan , P. Gavrilovic , N. Holonyal , R.D. Burnham , R.L. Thornton . Stripe geomentry AlGaAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering. Appl. Phys. Lett. , 75 - 77
    5. 5)
      • B.M. Arora , M.G. Bidnurkar . Anodic oxidation of GaAs. Solid-State Electron. , 657 - 658
    6. 6)
      • K. Meehan , J.M. Brown , N. Holonyak , R.D. Burnham , T.L. Paoli , W. Streifer . Stripe geometry AlGaAs-GaAs quantum well heterostructure lasers defined by impurity-induced disorderingo. Appl. Phys. Lett. , 700 - 702
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