Implantation-enhanced oxidation of tantalum for capacitor structures

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Implantation-enhanced oxidation of tantalum for capacitor structures

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© The Institution of Electrical Engineers
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The letter investigates the enhanced thermal oxidation of tantalum using oxygen-ion implantation. A comparison of the electrical and dielectric properties is made between the oxygen-implanted thermal oxides and of those fabricated without implantation. The ion-implanted tantalum-oxide films are shown to be superior to the unimplanted layers for the fabrication of oxide capacitors.

Inspec keywords: dielectric properties of solids; ion implantation; capacitors; oxidation; electronic conduction in insulating thin films; tantalum; dielectric thin films; tantalum compounds; integrated circuit technology

Other keywords: fabrication; semiconductor IC; dielectric properties; electrical properties; capacitor structures; enhanced thermal oxidation; Ta-Ta2O5; integrated circuits; oxide capacitors; O ion implantation; thermal oxides

Subjects: Capacitors; Semiconductor doping; Surface treatment (semiconductor technology); Dielectric materials and properties

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