@ARTICLE{ iet:/content/journals/10.1049/el_19890229, author = {M.A. Mohammed}, author = {D.V. Morgan}, author = {M. Nobes}, keywords = {Ta-Ta2O5;integrated circuits;O ion implantation;oxide capacitors;electrical properties;fabrication;enhanced thermal oxidation;dielectric properties;capacitor structures;semiconductor IC;thermal oxides;}, ISSN = {0013-5194}, language = {English}, abstract = {The letter investigates the enhanced thermal oxidation of tantalum using oxygen-ion implantation. A comparison of the electrical and dielectric properties is made between the oxygen-implanted thermal oxides and of those fabricated without implantation. The ion-implanted tantalum-oxide films are shown to be superior to the unimplanted layers for the fabrication of oxide capacitors.}, title = {Implantation-enhanced oxidation of tantalum for capacitor structures}, journal = {Electronics Letters}, issue = {5}, volume = {25}, year = {1989}, month = {March}, pages = {329-330(1)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Electrical Engineers}, url = {https://digital-library.theiet.org/;jsessionid=f83n35r6qs3o.x-iet-live-01content/journals/10.1049/el_19890229} }