Implantation-enhanced oxidation of tantalum for capacitor structures

Implantation-enhanced oxidation of tantalum for capacitor structures

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The letter investigates the enhanced thermal oxidation of tantalum using oxygen-ion implantation. A comparison of the electrical and dielectric properties is made between the oxygen-implanted thermal oxides and of those fabricated without implantation. The ion-implanted tantalum-oxide films are shown to be superior to the unimplanted layers for the fabrication of oxide capacitors.


    1. 1)
      • D.V. Morgan , F.H. Eisen , M.J. Howes , D.V. Morgan . (1985) , Ion implantation and damage in gallium arsenide, material, devices and circuits.
    2. 2)
      • G. Dearnaley , J.H. Freeman , R.S. Nelson , J. Stephen . (1976) , Application of ion implantation to semiconductors.
    3. 3)
      • G. Carter , W.A. Grant . (1976) , Ion implantation of semiconductors.
    4. 4)
      • Mohammed, M.A.: , PhD thesis, University of Wales College of Cardiff.
    5. 5)
      • J.G. Simmon . Phys. Rev.. Phys. Rev. , 3
    6. 6)
      • N.I. Jaeger , G.P. Klein , B. Myrvaagnes . J. Electrochem. Soc.. J. Electrochem. Soc. , 11
    7. 7)
      • D.A. McLean . J. Electrochem. Soc.. J. Electrochem. Soc.
    8. 8)
      • Pittetti, R.C., Worobey, W.: 21st Electronic Components Conference, Washington, IEEE Electronic Industries Assoc., p. 195.
    9. 9)
      • J. Alexander , D.A. Jackson , E.L. Bush . (1986) IEEE Trans. on Comp. Hybrids & Manuf. Tech..
    10. 10)
      • S.M. Sze . (1981) , Physics of semiconductor devices.
    11. 11)
      • Muhammad, A.J.: 1984, PhD Thesis, Unversity of Leeds.
    12. 12)
      • Smith, B.J.: `Projected ion range data for silicon planar technology', Rept. R6660, RERE, 1971.

Related content

This is a required field
Please enter a valid email address