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Implantation-enhanced oxidation of tantalum for capacitor structures

Implantation-enhanced oxidation of tantalum for capacitor structures

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The letter investigates the enhanced thermal oxidation of tantalum using oxygen-ion implantation. A comparison of the electrical and dielectric properties is made between the oxygen-implanted thermal oxides and of those fabricated without implantation. The ion-implanted tantalum-oxide films are shown to be superior to the unimplanted layers for the fabrication of oxide capacitors.

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