© The Institution of Electrical Engineers
A Si/Si0.8Ge0.2 heterojunction bipolar transistor was fabricated having emitter, base and collector contacts at the wafer surface. The base doping concentration amounted to 1019/cm3 which was 20 times the emitter concentration. Due to the pronounced difference in bandgap energy a current gain of 17 was reached.
References
-
-
1)
-
T. Tatsumi ,
H. Hirayama ,
N. Aizaki
.
Si/Ge0.3Si0.7Si heterojunction bipolar transistor made with Si molecular beam epitaxy.
Appl. Phys. Lett.
,
895 -
897
-
2)
-
G.L. Patton
.
Silicon–germanium-base heterojunction bipolar transistor by molecular beam epitaxy.
IEEE Electron Device Lett.
,
165 -
167
-
3)
-
H. Temkin ,
J.C. Bean ,
A. Antreasyan ,
R. Leibenguth
.
GexSi1-x strained-layer heterostructure bipolar transistors.
Appl. Phys. Lett.
,
1089 -
1091
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19890134
Related content
content/journals/10.1049/el_19890134
pub_keyword,iet_inspecKeyword,pub_concept
6
6