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Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration

Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration

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© The Institution of Electrical Engineers
Published

A Si/Si0.8Ge0.2 heterojunction bipolar transistor was fabricated having emitter, base and collector contacts at the wafer surface. The base doping concentration amounted to 1019/cm3 which was 20 times the emitter concentration. Due to the pronounced difference in bandgap energy a current gain of 17 was reached.

Inspec keywords: doping profiles; semiconductor materials; Ge-Si alloys; silicon; elemental semiconductors; bipolar transistors

Other keywords: heterojunction bipolar transistor; current gain; Si-Si0.8Ge0.2; wafer surface; emitter doping concentration; doping concentration; base doping; bandgap energy

Subjects: Semiconductor doping; Bipolar transistors

References

    1. 1)
      • T. Tatsumi , H. Hirayama , N. Aizaki . Si/Ge0.3Si0.7Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Appl. Phys. Lett. , 895 - 897
    2. 2)
      • G.L. Patton . Silicon–germanium-base heterojunction bipolar transistor by molecular beam epitaxy. IEEE Electron Device Lett. , 165 - 167
    3. 3)
      • H. Temkin , J.C. Bean , A. Antreasyan , R. Leibenguth . GexSi1-x strained-layer heterostructure bipolar transistors. Appl. Phys. Lett. , 1089 - 1091
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19890134
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