http://iet.metastore.ingenta.com
1887

Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration

Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A Si/Si0.8Ge0.2 heterojunction bipolar transistor was fabricated having emitter, base and collector contacts at the wafer surface. The base doping concentration amounted to 1019/cm3 which was 20 times the emitter concentration. Due to the pronounced difference in bandgap energy a current gain of 17 was reached.

References

    1. 1)
      • T. Tatsumi , H. Hirayama , N. Aizaki . Si/Ge0.3Si0.7Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Appl. Phys. Lett. , 895 - 897
    2. 2)
      • H. Temkin , J.C. Bean , A. Antreasyan , R. Leibenguth . GexSi1-x strained-layer heterostructure bipolar transistors. Appl. Phys. Lett. , 1089 - 1091
    3. 3)
      • G.L. Patton . Silicon–germanium-base heterojunction bipolar transistor by molecular beam epitaxy. IEEE Electron Device Lett. , 165 - 167
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19890134
Loading

Related content

content/journals/10.1049/el_19890134
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address