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Electron transit time through depletion layer of GaInAs pn junction

Electron transit time through depletion layer of GaInAs pn junction

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© The Institution of Electrical Engineers
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Using an empirical formula for the electron velocity, the transist time through a Ga0.47In0.53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Ga0.47In0.53As layer on InP substrate.

Inspec keywords: p-i-n diodes; gallium arsenide; avalanche photodiodes; semiconductor epitaxial layers; indium compounds; p-n homojunctions; III-V semiconductors; semiconductor device models

Other keywords: semiconductors; modelling; applied voltage; response time; p-i-n photodiodes; p-n junctions; avalanche photodiode; empirical formula; electron velocity; semiconductor epitaxial layers; depletion layer; minimum transit time; Ga0.47In0.53As-InP; electron transit time

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Epitaxial growth; Photoelectric devices; II-VI and III-V semiconductors; Semiconductor junctions; Junction and barrier diodes

References

    1. 1)
      • R.L. McColl , R.L. Carter , J.M. Owens , T.J. Shieh . GaAs MESFET simulation using PISCES with field-dependent mobility-diffusivity relation. IEEE Trans. , 10
    2. 2)
      • S.M. Sze . (1981) , Physics of semiconductor devices.
    3. 3)
      • T.P. Pearsall . (1982) , GaInAsP alloy semiconductors.
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