Less than 10ps optoelectronic switching by semiconductor injection lasers
Less than 10ps optoelectronic switching by semiconductor injection lasers
- Author(s): E. Shatkovsky ; A. Didžiulis ; M.I. Yefimchik ; S.V. Jefremov ; B.N. Levitas ; P.P. Vasiljev ; I.S. Goldobin
- DOI: 10.1049/el:19890082
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- Author(s): E. Shatkovsky 1 ; A. Didžiulis 1 ; M.I. Yefimchik 2 ; S.V. Jefremov 2 ; B.N. Levitas 2 ; P.P. Vasiljev 3 ; I.S. Goldobin 3
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View affiliations
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Affiliations:
1: Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius, USSR
2: Institute of Semiconductor Physics, Institute of Radiomeasuring Devices, Vilnius, USSR
3: P.N. Lebedev Physical Institute, Academy of Sciences of the USSR, Moscow, USSR
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Affiliations:
1: Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius, USSR
- Source:
Volume 25, Issue 2,
19 January 1989,
p.
111 – 112
DOI: 10.1049/el:19890082 , Print ISSN 0013-5194, Online ISSN 1350-911X
The generation of electrical pulses was carried out with optoelectronic switches which were controlled by semiconductor injection lasers. Electrical pulses with rise times less than 10 ps were formed.
Inspec keywords: pulse generators; laser beam applications; semiconductor junction lasers; optoelectronic devices
Other keywords:
Subjects: Semiconductor lasers; Pulse generators; Laser applications
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