High-resolution imaging of defects in III-V compound wafers by near-infra-red phase contrast microscopy

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High-resolution imaging of defects in III-V compound wafers by near-infra-red phase contrast microscopy

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© The Institution of Electrical Engineers
Published

The development of a high-resolution infra-red microscope operating in the phase contrast mode is reported for observing defects in III-V compound wafers. Strings of microprecipitates smaller than 1 µm in diameter connected by arched dislocation paths have been observed in indiumdoped GaAs. These results give similar patterns to those previously seen by other workers using A/B etching.

Inspec keywords: dislocations; precipitation; optical microscopy; III-V semiconductors; infrared spectra of inorganic solids

Other keywords: arched dislocation paths; defect imaging; microprecipitates; III-V compound wafers; high-resolution infra-red microscope; near-infra-red phase contrast microscopy

Subjects: Infrared and Raman spectra in inorganic crystals; II-VI and III-V semiconductors; Etch pits, decoration, transmission electron-microscopy and other direct observations of dislocations

References

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