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Input optical power dependence of the modulation voltage for GaInAsP electroabsorption modulators is studied. It is shown that the photogenerated hole pile-up at a heterointerface induces the increase of modulation voltage for the same extinction ratio with increasing the input optical power. The effect of the hole pile-up was greatly reduced in the new structure with the buffer layer of intermediate bandgap between the GaInAsP waveguide and InP upper clad layers.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19890065
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