Monolithic InP/GaInAs pin FET receiver using MOMBE-grown crystal

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Monolithic InP/GaInAs pin FET receiver using MOMBE-grown crystal

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© The Institution of Electrical Engineers
Published

An InP/GaInAs monolithic pin FET is fabricated using MOMBE crystal growth and Be ion implantation techniques. The MOMBE crystal growth technique is shown to be adaptable to the versatile requirements of the receiver crystal. The epigrowth together with the Be ion implantation provides a promising OEIC fabrication technique. The pin FET operated with 1.3 GHz bandwidth and 6 dB gain.

Inspec keywords: III-V semiconductors; field effect integrated circuits; ion implantation; p-i-n diodes; molecular beam epitaxial growth; integrated circuit technology; gallium arsenide; integrated optoelectronics; receivers; optical communication equipment; indium compounds

Other keywords: epigrowth; 6 dB; OEIC fabrication technique; MOMBE crystal growth technique; Be ion implantation; bandwidth; 1.3 GHz; MOMBE-grown crystal; gain; InP-GaInAs; semiconductors

Subjects: II-VI and III-V semiconductors; Semiconductor doping; Epitaxial growth; Optical communication; Other field effect integrated circuits; Integrated optoelectronics

References

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