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Monolithic InP/GaInAs pin FET receiver using MOMBE-grown crystal

Monolithic InP/GaInAs pin FET receiver using MOMBE-grown crystal

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An InP/GaInAs monolithic pin FET is fabricated using MOMBE crystal growth and Be ion implantation techniques. The MOMBE crystal growth technique is shown to be adaptable to the versatile requirements of the receiver crystal. The epigrowth together with the Be ion implantation provides a promising OEIC fabrication technique. The pin FET operated with 1.3 GHz bandwidth and 6 dB gain.

References

    1. 1)
      • Matsuda, K., Kubo, M., Ohnaka, K., Shibata, J.: `A monolithically integrated InGaAs/InP photoreceiver operating with a single 5 V power supply', Tech. dig. 13th ECOC, 1987, Helsinki, p. 39–42.
    2. 2)
      • Miura, S., Hamaguchi, H., Mikawa, T., Fujii, T., Aoki, O., Wada, O.: `High-speed GaInAs monolithic PIN/FET receiver', Tech. dig. 13th ECOC, 1987, p. 66–69.
    3. 3)
      • B. Tell , A.S.H. Liao , K.F. Brown-Goebeler , T.J. Bridges , G. Burkhardt , T.Y. Chang , N.S. Bergano . Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FETs. IEEE Trans. , 2319 - 422321
    4. 4)
      • C.-L. Cheng , R.P.H. Chang , B. Tell , S.M.Z. Parker , Y. Ota , G.P. Vella-Coleiro , R.C. Miller , J.L. Zilko , B.L. Kasper , K.F. Brown-Goebeler , V.D. Mattera . Monolithically integrated receiver front end: InGaAs p-i-n amplifier. IEEE Trans. , 1439 - 421443
    5. 5)
      • K. Asano , K. Kasahara , T. Itoh . GaAs MESFETs fabricated on InP substrates. IEEE Electron Dev. Lett. , 289 - 42290
    6. 6)
      • Imoto, Y., Fujita, S., Terakado, T., Kasajara, K., Suzaki, T., Asano, K., Torikai, T., Itoh, T., Shikada, M., Suzuki, A., Kobayashi, K.: `A 1.2 Gb/s-52.5km optical fiber transmission experiment using OEICs on GaAs-on-InP heterostructures.', PD9–1, Tech. dig. OFC '88, 1988, New Orleans.
    7. 7)
      • Kawaguchi, Y., Asahi, H., Nagai, H.: `Gas source MBE growth of high-quality InGaAs', Extended abstracts of 18th conf. on solid-state devices and materials, 1986, Tokyo, p. 619–42622.
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