Maskless selective diffusion of Si into GaAs

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Maskless selective diffusion of Si into GaAs

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© The Institution of Electrical Engineers
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A maskless selective diffusion of silicon into GaAs is achieved by the selective modification of the GaAs surface using low energy Ar sputtering. The Ga rich surface resulting from the Ar sputtering prevents the diffusion of silicon into GaAs.

Inspec keywords: semiconductor doping; silicon; III-V semiconductors; gallium arsenide; sputtering; semiconductor technology

Other keywords: maskless selective diffusion; GaAs:Si; selective modification of GaAs surface; low energy Ar sputtering; semiconductors; Ga rich surface

Subjects: Surface treatment (semiconductor technology); II-VI and III-V semiconductors; Semiconductor doping

References

    1. 1)
      • E. Omura , X.S. Wu , G.A. Vawter , L. Coldren , E. Hu. , J.L. Merz . Closed tube diffusion of silicon in GaAs from sputtered silicon film. Electron. Lett. , 496 - 498
    2. 2)
      • K. Meehan , J.M. Brown , N. Holonyak , R.D. Burnham , T.L. Paoli , W. Streifer . Stripe geometry AlGaAs-GaAs quantum well heterostructure lasers defined by impurity-induced disordering. Appl. Phys. Lett. , 700 - 702
    3. 3)
      • C.C. Chang , P.H. Citrin , B. Schwartz . Chemical preparation of GaAs surfaces and their characterization by Auger electron and X-ray photoemission spectroscopies. J. Vac. Sci. Technol. , 943 - 952
    4. 4)
      • M.E. Greiner , J.F. Gibbons . Diffusion of silicon in gallium arsenide using rapid thermal processing: experimental and model. Appl. Phys. Lett. , 750 - 752
    5. 5)
      • M.E. Greiner , J.F. Gibbons . Diffusion and electrical properties of silicon doped galluim arsenide. J. Appl. Phys. , 5181 - 5187
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