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We report the first measurements of the quantum confined Stark effect in single GaInAs/InP quantum wells using photocurrent spectra from a single 80 Å well. Well resolved excitonic features are observed for values of electric field up to 3 × 105 V/cm, whose field dependent shift and peak height are in excellent agreement with the predictions of an effective mass calculation, thus demonstrating that there are no intrinsic factors limiting this effect in the GaInAs/InP material system.
Inspec keywords: vapour phase epitaxial growth; gallium arsenide; indium compounds; semiconductor superlattices; semiconductor junctions; Stark effect; photoconductivity; III-V semiconductors
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Subjects: Chemical vapour deposition; Photoconduction and photovoltaic effects; photodielectric effects; Semiconductor junctions; II-VI and III-V semiconductors; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Epitaxial growth; Electro-optical effects (condensed matter)