Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride

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Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride

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© The Institution of Electrical Engineers
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Silicon nitrides, deposited on silicon by PECVD using an SiH4/NH3 plasma at 300°C, were anodised in an oxygen plasma at 500°C. The resulting dielectric appears to have lower fixed charge, leakage current and interface trap density than the original PECVD nitride, and to have the potential of use as a gate dielectric for MIS devices in VLSI circuits.

Inspec keywords: VLSI; anodisation; semiconductor-insulator boundaries; metal-insulator-semiconductor devices; CVD coatings

Other keywords: leakage current; Si3N4-Si; interface trap density; gate dielectric; MIS devices; PECVD; fixed charge; plasma anodisation; VLSI

Subjects: Surface treatment (semiconductor technology); Chemical vapour deposition; Metal-insulator-semiconductor structures

References

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      • J.P. Luongo . IR study of amorphous silicon nitride films. Appl. Spectrosc. , 195 - 199
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      • S. Taylor , W. Eccleston , P. Watkinson . Advances in electrical properties of plasma-grown oxides of silicon. Electron. Lett. , 732 - 733
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