GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates

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GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates

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Using a very thin layer of GaAs (2.1 μm) on Si, we have fabricated GaAs MESFETs, 19 stage ring oscillators, and divide-by-2 frequency dividers with good yield. The MESFETs exhibited a maximum gm of 153 mS/mm. The DCFL 19 stage ring oscillators had a minimum propagation delay of 52ps/gate at a power dissipation of 1.3 mW/gate with a yield of 40%. The divide-by-2 circuits performed the frequency dividing operation up to 1.8 GHz.

Inspec keywords: III-V semiconductors; semiconductors; field effect integrated circuits; integrated logic circuits; molecular beam epitaxial growth; Schottky gate field effect transistors; dividing circuits

Other keywords: yield; frequency dividing operation; 1.8 GHz; minimum propagation delay; Si; frequency dividers; GaAs; ring oscillators; MESFETs; power dissipation

Subjects: Logic circuits; Other MOS integrated circuits; Epitaxial growth

References

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      • H. Shichijo , J.W. Lee , W.V. McLevige , A.H. Takkiken . GaAs E/D MESFET 1-kbit SRAM fabricated on Si substrate. IEEE Electron Device Lett. , 121 - 123
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      • Y. Ishii , S. Miyazawa , S. Ishida . Threshold voltage scattering of GaAs MESFET's fabricated on LEC-grown semi-insulating substrates. IEEE Trans. , 800 - 804
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      • T. Nonaka , M. Akiyama , Y. Kawarada , K. Kaminisi . Fabrication of GaAs MESFET ring oscillator on MOCVD grown GaAs/Si (100) substrate. Jpn. J. Appl. Phys. , L919 - L921
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      • N. Chand , R. Fischer , A.M. Sergent , D.V. Lang , S.J. Pearton , A.Y. Cho . Electrical activity of defects in MBE grown GaAs on Si and its reduction by rapid thermal annealing. Appl. Phys. Lett. , 813 - 815
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