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Ultra-thin-channelled GaAs MESFET with double-δ-doped layers

Ultra-thin-channelled GaAs MESFET with double-δ-doped layers

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GaAs MESFETs with double-δ-doped layers have been fabricated with electron-beam-induced resist. The FET is made with the δ-doped channel embedded as shallow as 70 ̇ from the surface, and shows an intrinsic transconductance of 400 mS/mm for a gate length of about 1500 ̇.

References

    1. 1)
      • K. Ploog , M. Hauser , A. Fischer . Fundamental studies and device application of δ-doping in GaAs layers and in AlGaAs/GaAs heterostructures. Appl. Phys. , 233 - 244
    2. 2)
      • M.B. Das , M.L. Roszak . Design calculation for submicron gate-length AlGaAs/GaAs modulation-doped FET structure using carrier saturation velocity/charge control model. Solid-State Electron. , 997 - 1005
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