Bistable operation of 0.8μm GaInAsP/AaAs lasers
Bistable operation of 0.8μm GaInAsP/AaAs lasers
- Author(s): J. Ishikawa ; T. Ito ; N.S. Takahashi ; S. Kurita
- DOI: 10.1049/el:19880690
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- Author(s): J. Ishikawa 1 ; T. Ito 1 ; N.S. Takahashi 1 ; S. Kurita 1
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View affiliations
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Affiliations:
1: Department of Electrical Engineering, Faculty of Science & Technology, Keio University, Yokohama, Japan
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Affiliations:
1: Department of Electrical Engineering, Faculty of Science & Technology, Keio University, Yokohama, Japan
- Source:
Volume 24, Issue 16,
4 August 1988,
p.
1014 – 1016
DOI: 10.1049/el:19880690 , Print ISSN 0013-5194, Online ISSN 1350-911X
Quaternary GaInAsP prepared on GaAs is a very promising material for optoelectronic devices in alternating AlGaAs/GaAs systems. We report bistable operation in stripe geometry GaInAsP/GaAs DH lasers with gain region and absorbing region in the laser resonator. A hysteresis loop is observed in the I/L curve under pulsed operation at room temperature.
Inspec keywords: gallium arsenide; indium compounds; integrated optoelectronics; III-V semiconductors; hysteresis; semiconductor junction lasers; semiconductor technology
Other keywords:
Subjects: Semiconductor technology; II-VI and III-V semiconductors; Semiconductor lasers; Integrated optoelectronics
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