Photonic switching by tunnelling-assisted absorption modulation in a GaAs sawtooth structure

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Photonic switching by tunnelling-assisted absorption modulation in a GaAs sawtooth structure

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© The Institution of Electrical Engineers
Published

We report on an electrically controlled optical modulator using a novel GaAs sawtooth structure. This structure consists of alternating n-type and p-type delta-doped GaAs. Modulation of tunnelling-assisted absorption is achieved by changing the internal electric field which in turn is controlled by external bias. Modulation of light intensity is demonstrated over a broad spectral range of Δλ > 100 nm. A contrast ratio of 1 : 1.7 of the opaque and transparent states is obtained. Low-voltage operation (ΔV < 5V) and potential high-speed capability make the new device an attractive candidate for future photonic switching systems.

Inspec keywords: tunnelling; optoelectronic devices; optical communication equipment; optical modulation; switching

Other keywords: p-type; tunnelling-assisted absorption modulation; optical communication equipment; n-type; high-speed capability; internal electric field; semiconductor superlattice; photoionic switching systems; external bias; delta-doped GaAs; GaAs sawtooth structure; electrically controlled optical modulator

Subjects: Optoelectronic materials and devices; Optical communication

References

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      • C.J. Chang-Hasnain , G. Hasnain , N.M. Johnson , G.H. Dohler , J.N. Miller , J.R. Whinnery , A. Dienes . Tunable electro-absorption in gallium arsenide doping superlattices. Appl. Phys. Lett.
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      • E.F. Schubert , J.B. Stark , B. Ullrich , J.E. Cunningham . Spatial localization of impurities in delta-doped n-type GaAs. Appl. Phys. Lett.
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      • G.E. Stillman , C.M. Wolfe . Avalanche photodiodes. Semicond. & Semimetals
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      • E.F. Schubert , J.E. Cunningham , W.T. Tsang . Realizationof the Esaki-Tsu-type doping superlattice. Phys. Rev. B
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