InP/Ga0.47In0.53As superlattice avalanche photodiode

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InP/Ga0.47In0.53As superlattice avalanche photodiode

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The article reports a theoretical study on the photoresponse characteristics of an InP/Ga0.47In0.53As superlattice p+in+ APD for operation in the 1–1.6 μm wavelength region. It has been found that the β/α ratio for the structure is 16 for an electric field E = 3 × 107/m. The device is thus expected to become an attractive low-noise detector for fibre-optic communication systems. The device has a quantum efficiency of 60% at λ = 1.3 μm. The bandwidth of the response curve is approximately 100 MHz.

Inspec keywords: avalanche photodiodes; photodetectors; indium compounds; III-V semiconductors; optical communication equipment; gallium arsenide

Other keywords: low-noise detector; InP-Ga0.47In0.53As; 100 MHz; fibre-optic communication systems; 1 to 1.6 micron; superlattice avalanche photodiode; p+ in+ APD; III-V semiconductors; quantum efficiency; photoresponse characteristics; 60 percent

Subjects: Photoelectric devices; Optical communication

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