© The Institution of Electrical Engineers
PMOS transistors with channel lengths down to 0.35 μm have been fabricated by implanting boron into TiSi2, and using a low temperature anneal to outdiffuse the dopant and form the P+ junction. This allows the formation of shallow, low resistance junctions (≤0.26 μm, 5Ω/□) and retains any ion damage within the silicide. Electrical measurements show reverse leakage currents of ˜1 nA/cm2 and PMOS characteristics comparable to or better than conventionally formed PMOS transistors.
References
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1)
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Shone, F.C., Saraswat, K.C., Plummer, J.D.: `Formation of 0.1 μm N', Proc. International Electron Devices meeting, 1985, Washington, USA, p. 407–410.
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2)
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Lui, R., Williams, D.S., Lynch, W.T.: `Mechanisms for process induced leakage in shallow silicided junctions', Proc. International Electron Devices meeting, 1986, Los Angeles, USA, p. 58–61.
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