Formation and analysis of shallow arsenic profiles
Formation and analysis of shallow arsenic profiles
- Author(s): S. Clayton ; L. Springer ; B. Offord ; T. Sedgwick ; R. Reedy ; A. Michel ; G. Scilla
- DOI: 10.1049/el:19880565
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- Author(s): S. Clayton 1 ; L. Springer 2 ; B. Offord 1 ; T. Sedgwick 3 ; R. Reedy 1 ; A. Michel 3 ; G. Scilla 3
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View affiliations
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Affiliations:
1: Naval Ocean Systems Center, San Diego, USA
2: IBM Federal Systems Division, Manassas, USA
3: IBM Thomas J. Watson Research Center, Yorktown Heights, USA
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Affiliations:
1: Naval Ocean Systems Center, San Diego, USA
- Source:
Volume 24, Issue 14,
7 July 1988,
p.
831 – 833
DOI: 10.1049/el:19880565 , Print ISSN 0013-5194, Online ISSN 1350-911X
Shallow arsenic implants were activated by furnace and rapid thermal annealing (RTA). Comparisons of junction depths measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR) showed SIMS values 50–90nm deeper than SR values, due to ion knock-on during SIMS profiling.
Inspec keywords: ion implantation; annealing; semiconductor doping; silicon; arsenic; elemental semiconductors
Other keywords:
Subjects: Semiconductor doping; Elemental semiconductors
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