Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µm

Access Full Text

Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µm

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

GaAs light-emitting diodes emitting at 1.54 µm have been fabricated using Er-doped GaAs grown by metal organic chemical vapour deposition, and the output characteristics are reported for the first time. Characteristic emission from the internal 4f-shell transitions of erbium is observed even at room temperature, and the wavelength shifts by less than the measurement resolution of 1 nm over the temperature range from 180K to 296 K. These results confirm the possibility of fabricating stable light sources using rare earth doped semiconductors.

Inspec keywords: semiconductor doping; electroluminescence; III-V semiconductors; gallium arsenide; erbium; light emitting diodes

Other keywords: internal 4f-shell transitions; semiconductors; GaAs:Er light emitting diodes; temperature range; metal organic chemical vapour deposition; wavelength shifts; output characteristics; f-shell luminescence; 1.54 micron; 180 to 296 K; room temperature; LED; stable light sources

Subjects: Light emitting diodes; Semiconductor doping; II-VI and III-V semiconductors

References

    1. 1)
      • H. Nakagome , K. Takahei , Y. Homma . Liquid phase epitaxy and characterization of rare-earth ion (Yb, Er) doped InP. J. Crystal. Growth , 345 - 356
    2. 2)
      • W.T. Tsang , R.A. Logan . Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasers. Appl. Phys. Lett. , 1686 - 1688
    3. 3)
      • W. Körber , J. Weber , A. Hangleiter , K.W. Benz , H. Ennen , H.D. Müller . Rare earth ions in LPE III-V semiconductors. J.Crystal Growth , 741 - 744
    4. 4)
      • H. Ennen , G. Pomrenke , A. Axmann , K. Eisele , W.H. Haydl , J. Schneider . 1.54 μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy. Appl. Phys. Lett. , 381 - 383
    5. 5)
      • Ennen, H.: `Photo- and electroluminescence investigations of rare earth ions in III-V semiconductors', Extended abstracts of the 19th conference on solid state devices and materials, 1987, p. 83–86.
    6. 6)
      • J.P. van der Zeil , M.G. Oberg , R.A. Logan . Single longitudinal mode operation of Er-doped 1.5 μm InGaAsP lasers. Appl. Phys. Lett. , 1313 - 1315
    7. 7)
      • A.D. Dimitriev , L.F. Zakharenkov , V.A. Kasatkin , V.F. Masterov , B.E. Samorukov . Electroluminescence of ytterbium-doped indium phosphide. Sov. Phys. Semicond.
    8. 8)
      • Tsang, W.T.: International Conference on GaAs and Related Compounds, 1987.
    9. 9)
      • Uwai, K., Nakagome, H., Takahei, K.: `l.54 μm emission from Er-doped GaAs and InP grown by metalorganic chemical vapor deposition', Extended abstracts of the 19th conference on solid state devices and materials, 1987, p. 87–90.
    10. 10)
      • W.H. Haydl , H.D. Müller , H. Ennen , W. Körber , K.W. Benz . Ytterbium-doped InP light emitting diode at 1.0 μm. Appl. Phys. Lett. , 870 - 872
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19880499
Loading

Related content

content/journals/10.1049/el_19880499
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading