Electrical characterisation of Si-doped GaAs0.5Sb0.5 on InP grown by molecular beam epitaxy
Electrical characterisation of Si-doped GaAs0.5Sb0.5 on InP grown by molecular beam epitaxy
- Author(s): A. Sandhu ; T. Fujii ; Y. Nakata ; S. Sugiyama ; E. Miyauchi
- DOI: 10.1049/el:19880305
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- Author(s): A. Sandhu 1 ; T. Fujii 1 ; Y. Nakata 1 ; S. Sugiyama 1 ; E. Miyauchi 1
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View affiliations
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Affiliations:
1: Fujitsu Laboratories Ltd., Atsugi, Japan
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Affiliations:
1: Fujitsu Laboratories Ltd., Atsugi, Japan
- Source:
Volume 24, Issue 8,
14 April 1988,
p.
451 – 452
DOI: 10.1049/el:19880305 , Print ISSN 0013-5194, Online ISSN 1350-911X
Between the growth temperatures of 490–520°C Si-doped GaAs0.5Sb0.5 changes from 1 × 1017cm−3n-type to 2 × 1017cm−3p-type. The scattering mechanisms of the n and p-type epilayers are investigated. The reproducibiiity and potential applications of the observed conduction type change are demonstrated by the fabrication of a pn diode.
Inspec keywords: molecular beam epitaxial growth; semiconductor doping; gallium compounds; gallium arsenide; III-V semiconductors; p-n homojunctions; silicon; semiconductor growth; semiconductor epitaxial layers; indium compounds
Other keywords:
Subjects: Epitaxial growth; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; II-VI and III-V semiconductors; Electronic properties of semiconductor thin films; Semiconductor doping; Semiconductor junctions
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