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Between the growth temperatures of 490–520°C Si-doped GaAs0.5Sb0.5 changes from 1 × 1017cm−3n-type to 2 × 1017cm−3p-type. The scattering mechanisms of the n and p-type epilayers are investigated. The reproducibiiity and potential applications of the observed conduction type change are demonstrated by the fabrication of a pn diode.
References
-
-
1)
-
D.C. Dexter ,
F. Seitz
.
Effect of dislocations on mobilities in semiconductors.
Phys. Rev.
,
964 -
965
-
2)
-
D. Lancefield ,
A.R. Adams ,
M.A. Fisher
.
Reassessment of ionized impurity scattering and compensation in GaAs and InP including correlation scattering.
J. Appl. Phys.
,
2342 -
2359
-
3)
-
M.J. Cherng ,
Y.T. Cherng ,
H.R. Jen ,
P. Harper ,
R.M. Cohen ,
G.B. Stringfellow
.
OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5.
J. Electron. Mater.
,
79 -
84
-
4)
-
J. Klem ,
D. Huang ,
H. Morkoc ,
Y.E. Ihm ,
N. Otsuka
.
Molecular beam epitaxial growth and low temperature characterization of GaAs0.5Sb0.5 on InP.
Appl. Phys. Lett.
,
1364 -
1366
-
5)
-
T.D. McLean ,
T.M. Kerr ,
D.F. Westwood ,
J.D. Grange ,
I.J. Murgatroyd
.
(1985)
, Optical and electrical characterisation of GaAS.
-
6)
-
J. Klem ,
D. Huang ,
H. Morkoc ,
N. Otsuka
.
Growth and characterization of GaAs1−xSbx, on InP by molecular beam epitaxy.
Proc. SPIE
,
18 -
20
-
7)
-
K.Y. Cheng ,
A.Y. Cho
.
Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.52In0.52As grown by molecular beam epitaxy.
J. Appl. Phys.
,
4411 -
4415
-
8)
-
C.A. Chang ,
R. Ludeke ,
L.L. Chang ,
L. Esaki
.
Molecular beam epitaxy of In1−xGaxAs and GaSb1−yAsy.
Appl. Phys. Lett.
,
759 -
761
-
9)
-
T. Tanoue ,
H. Sakaki
.
A new method to control impact ionization ratio rate by spatial separation of avalanching carriers in multilayered heterostructures.
Appl. Phys. Lett.
,
67 -
70
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