Electrical characterisation of Si-doped GaAs0.5Sb0.5 on InP grown by molecular beam epitaxy

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Electrical characterisation of Si-doped GaAs0.5Sb0.5 on InP grown by molecular beam epitaxy

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© The Institution of Electrical Engineers
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Between the growth temperatures of 490–520°C Si-doped GaAs0.5Sb0.5 changes from 1 × 1017cm−3n-type to 2 × 1017cm−3p-type. The scattering mechanisms of the n and p-type epilayers are investigated. The reproducibiiity and potential applications of the observed conduction type change are demonstrated by the fabrication of a pn diode.

Inspec keywords: molecular beam epitaxial growth; semiconductor doping; gallium compounds; gallium arsenide; III-V semiconductors; p-n homojunctions; silicon; semiconductor growth; semiconductor epitaxial layers; indium compounds

Other keywords: n-type epilayers; scattering mechanisms; applications; growth temperature dependence; InP; MBE; pn diode; semiconductor doping; reproducibility; 490 to 520 C; conduction type change; GaAs0.5Sb0.5:Si-InP; semiconductors; p-type epilayers

Subjects: Epitaxial growth; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; II-VI and III-V semiconductors; Electronic properties of semiconductor thin films; Semiconductor doping; Semiconductor junctions

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