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Between the growth temperatures of 490–520°C Si-doped GaAs0.5Sb0.5 changes from 1 × 1017cm−3n-type to 2 × 1017cm−3p-type. The scattering mechanisms of the n and p-type epilayers are investigated. The reproducibiiity and potential applications of the observed conduction type change are demonstrated by the fabrication of a pn diode.
Inspec keywords: molecular beam epitaxial growth; semiconductor doping; gallium compounds; gallium arsenide; III-V semiconductors; p-n homojunctions; silicon; semiconductor growth; semiconductor epitaxial layers; indium compounds
Other keywords:
Subjects: Epitaxial growth; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; II-VI and III-V semiconductors; Electronic properties of semiconductor thin films; Semiconductor doping; Semiconductor junctions