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Electrical characterisation of Si-doped GaAs0.5Sb0.5 on InP grown by molecular beam epitaxy

Electrical characterisation of Si-doped GaAs0.5Sb0.5 on InP grown by molecular beam epitaxy

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Between the growth temperatures of 490–520°C Si-doped GaAs0.5Sb0.5 changes from 1 × 1017cm−3n-type to 2 × 1017cm−3p-type. The scattering mechanisms of the n and p-type epilayers are investigated. The reproducibiiity and potential applications of the observed conduction type change are demonstrated by the fabrication of a pn diode.

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