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Use of n+ spike doping regions as nonequilibrium connectors

Use of n+ spike doping regions as nonequilibrium connectors

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© The Institution of Electrical Engineers
Published

Very thin n+ layers of semiconductor (spike doping) may be used to control the potential difference between microelectronic components while not significantly modifying any nonequilibrium distributions of electron energy or momentum across their extent. We demonstrate this general principle with the example of a hot electron injection Gunn diode.

Inspec keywords: Gunn diodes; hot carriers; integrated circuit technology; semiconductor doping

Other keywords: nonequilibrium connectors; microelectronic components; nonequilibrium distributions; hot electron injection; semiconductor; Gunn diode; n+ spike doping regions

Subjects: Semiconductor doping; Bulk effect devices; Semiconductor integrated circuits

References

    1. 1)
      • J.R. Hayes , A.F.J. Levi , W. Wiegmann . Hot electron spectroscopy of GaAs. Phys. Rev. Lett. , 1570 - 1572
    2. 2)
      • M. Heiblum , M.I. Nathan , D.C. Thomas , C.M. Knoedler . Direct observation of ballistic transport in GaAs. Phys. Rev. Lett. , 2200 - 2203
    3. 3)
      • Beton, P.H., Long, A.P., Kelly, M.J.: `Monte-Carlo simulation of hot electron spectra', Proc. 5th Int. Conf. on Hot Carriers in Semiconductors, July 1987, to be published.
    4. 4)
      • I. Hase , H. Kawai , S. Imanaga , K. Kaneko , N. Watanabe . AlGaAs/GaAs hot electron transistor grown by MOCVD. Inst. Phys. Conf. Ser. , 613 - 618
    5. 5)
      • P.H. Beton , A.P. Long , M.J. Kelly . Hot electron transport in GaAs in the presence of a magnetic field. Appl. Phys. Lett. , 1425 - 1427
    6. 6)
      • D.E. McCumber , A.G. Chynoweth . Negative-conductance amplification and Gunn instabilities. IEEE Trans. , 4 - 21
    7. 7)
      • M. Shaw , H.L. Grubin , P.R. Solomon . (1979) , The Gunn-Hilsum effect.
    8. 8)
      • A.P. Long , P.H. Beton , M.J. Kelly . Hot electron transport in heavily doped GaAs. Semicond. Sci. Technol.
    9. 9)
      • W. Fawcett , A.D. Boardman , S. Swain . Monte-Carlo determination of electron transport properties in gallium arsenide. J. Phys. & Chem. Solids , 1963 - 1990
    10. 10)
      • M.A. Littlejohn , J.R. Hauser , T.H. Glisson . Velocity-field characteristics of GaAs with Γ6c-L6c-X6c conduction-band ordering. J. Appl. Phys. , 4587 - 4590
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