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780 nm AlGaAs DFB lasers fabricated by MOCVD

780 nm AlGaAs DFB lasers fabricated by MOCVD

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© The Institution of Electrical Engineers
Published

Continuous single mode oscillation was obtained in AlGaAs DFB lasers operating at approximately 780 nm at room temperature. DFB lasers have a low threshold current of about 25 mA and can be operated at an output level of up to 10 mW in stable, single longitudinal mode.

Inspec keywords: semiconductor growth; optical waveguides; laser modes; gallium arsenide; distributed feedback lasers; semiconductor junction lasers; aluminium compounds; laser transitions; III-V semiconductors; vapour phase epitaxial growth

Other keywords: semiconductor lasers; low threshold current; single longitudinal mode; room temperature; 25 mA; rib waveguide SCH type; MOCVD; DFB lasers; AlGaAs-GaAs; stable continuous single mode operation; 10 mW; 780 nm

Subjects: Design of specific laser systems; Chemical vapour deposition; Semiconductor lasers; Epitaxial growth; Optical waveguides; Optical waveguides and couplers; Lasing action in semiconductors

References

    1. 1)
      • S. Takigawa , M. Kume , K. Hamada , K. Takeoka , H. Naitoh , N. Yoshikawa , A. Yamamoto , H. Shimizu , K. Itoh . Continuous room-temperature operation of a 759-nm GaAlAs distributed feedback laser. Appl. Phys. Lett. , 1580 - 1581
    2. 2)
      • S. Hirata , T. Ohata , T. Yamamoto , C. Kojima . Yield dependency on length of AlGaAs/GaAs second-order distributed feedback lasers with cleaved facets. Appl. Phys. Lett. , 1475 - 1477
    3. 3)
      • K. Honda , S. Hirata , T. Ohata , S. Horii , C. Kojima . Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed feedback lasers grown by metalorganic chemical vapor deposition. IEEE J. Quantum Electron. , 839 - 842
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