© The Institution of Electrical Engineers
A new high-speed LED transmitter using novel GaAs MESFET bias and drive circuits has been developed. It can modulate LEDs beyond 560Mbit/s with up to 200 mA drive current. At 560Mbit/s, extinction ratios of 15 dB were attained with devices that otherwise operated up to 250Mbit/s. The transmitter was designed for single-mode loop applications.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19870925
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content/journals/10.1049/el_19870925
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