Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching

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Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching

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© The Institution of Electrical Engineers
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The first optical modulators based on the free-carrier bleaching effect have been demonstrated. In these singlequantum-wen FET optical modulator (FETOM) devices, the FET gate is self-aligned to a waveguide. They exhibit a 3 : 1 extinction ratio for a 10 V change in applied voltage to the gate electrode of a 750 μm FETOM waveguide.

Inspec keywords: gallium arsenide; optical waveguides; field effect integrated circuits; optical saturable absorption; optical modulation; III-V semiconductors; integrated optoelectronics; aluminium compounds

Other keywords: SQW; free-carrier-induced bleaching; self aligned gate; 10 V; GaAs-AlGaAs; integrated optoelectronics; single-quantum-well FET; III-V semiconductors; optical modulator; 750 micron

Subjects: Nonlinear optics and devices; Other MOS integrated circuits; Integrated optoelectronics

References

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      • A. Kastalsky , J.H. Abeles , R.F. Leheny . Novel optoelectronic single quantum well devices based on electron bleaching of exciton absorption. Appl. Phys. Lett. , 708 - 710
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      • D.S. Chemla , I. Bar-joseph , C. Klingshirn , D.A.B. Miller , J.M. Kuo , T.Y. Chang . Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel. Appl. Phys. Lett. , 585 - 587
    3. 3)
      • J.H. Abeles , A. Kastalsky , R.F. Leheny . Novel single quantum well optoelectronic devices based on exciton bleaching. J. Lightwave Technol. , 1296 - 1300
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