GaInAs junction FET fully dry etched by metal organic reactive ion etching technique

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GaInAs junction FET fully dry etched by metal organic reactive ion etching technique

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© The Institution of Electrical Engineers
Published

The metal organic reactive ion etching technique, which uses a mixture of methane, hydrogen and argon, has been applied for the first time to the fabrication of a device. This etching technique is used to define the gate of a GaInAs junction FET. Results shows that it permits good control of etching depth with low surface damage.

Inspec keywords: indium compounds; gallium arsenide; III-V semiconductors; sputter etching; junction gate field effect transistors

Other keywords: MORIE; methane Ar-H2 etching gas mixture; GaInAs junction FET; surface damage; JFET; control of etching depth; metal organic reactive ion etching

Subjects: Surface treatment (semiconductor technology); II-VI and III-V semiconductors; Other field effect devices

References

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      • J. Selders , H.J. Wachs , H. Jürgensen . GalnAs junction fet with inp buffer layer prepared by selective ion implantation of be and rapid thermal annealing. Electron. Lett. , 313 - 315
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      • R. Cheung , S. Thoms , S.P. Beamont , G. Doughty , V. Law , C.D.W. Wilkinson . Reactive ion etching of gaas using a mixture of methane and hydrogen. Electron. Lett. , 857 - 859
    3. 3)
      • L. Henry , C. Vaudry , P. Grandjoux . Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas. Electron, Lett. , 1253 - 1254
    4. 4)
      • Y.G. Chai , R. Yeats . InGaAs submicrometer FETs grown by MBE. IEEE Electron. Device Lett. , 252 - 254
    5. 5)
      • U. Niggebrugge , M. Klug , G. Garus . (1985) , A novel process for reactive ion etching of InP using CH.
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