Electro-optic effects and electroabsorption in a GaAs/AlGaAs multiquantum-well heterostructure near the bandgap

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Electro-optic effects and electroabsorption in a GaAs/AlGaAs multiquantum-well heterostructure near the bandgap

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© The Institution of Electrical Engineers
Published

We report phase difference measurements at 50 and 30 meV from the excitonic peak of a GaAs/AlGaAs multiquantum-well structure. We find pronounced dispersion of the quadratic effect; in contrast, we see no indication of dispersion in the linear effect even this close to the bandgap.

Inspec keywords: semiconductor superlattices; electroabsorption; gallium arsenide; III-V semiconductors; semiconductor junction lasers; aluminium compounds; electro-optical effects

Other keywords: excitonic peak; 30 meV; pronounced dispersion; quadratic effect; multiquantum-well heterostructure; electroabsorption; 50 meV; GaAs-AlGaAs; bandgap; phase difference measurements; linear effect

Subjects: Lasing action in semiconductors; Semiconductor junctions; Electro-optical devices; Semiconductor lasers; II-VI and III-V semiconductors; Electro-optical effects (condensed matter)

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