Room-temperature operation of Ga0.47In0.53As/AI0.48In0.52As resonant tunnelling diodes
Room-temperature operation of Ga0.47In0.53As/AI0.48In0.52As resonant tunnelling diodes
- Author(s): S. Sen ; F. Capasso ; A.L. Hutchinson
- DOI: 10.1049/el:19870856
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- Author(s): S. Sen 1 ; F. Capasso 1 ; A.L. Hutchinson 1
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View affiliations
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Affiliations:
1: AT&T Bell Laboratories, Murray Hill, USA
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Affiliations:
1: AT&T Bell Laboratories, Murray Hill, USA
- Source:
Volume 23, Issue 23,
5 November 1987,
p.
1229 – 1231
DOI: 10.1049/el:19870856 , Print ISSN 0013-5194, Online ISSN 1350-911X
The first room-temperature operation of Ga0.47In0.53As/Al0.48In0.52As resonant tunnelling (RT) diodes is reported. The peak/valley ratio of the current is as high as 4:1 at room temperature and is 15:1 at 80 K. These are the highest values of peak/valley ratio at the respective temperatures, reported so far, in this material system. The position of the peak in the current/voltage characteristic also showed good agreement with that obtained from an electron tunnelling transmission calculation.
Inspec keywords: arsenic compounds; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; tunnel diodes
Other keywords:
Subjects: Junction and barrier diodes
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