Uniformity of threshold voltage for MESFETs fabricated on VGF GaAs substrates
Uniformity of threshold voltage for MESFETs fabricated on VGF GaAs substrates
- Author(s): C.L. Reynolds ; W.C. Gibson ; J.E. Clemans
- DOI: 10.1049/el:19870851
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): C.L. Reynolds 1 ; W.C. Gibson 1 ; J.E. Clemans 2
-
-
View affiliations
-
Affiliations:
1: AT&T Bell Laboratories, Reading, USA
2: AT&T Engineering Research Center, Princeton, USA
-
Affiliations:
1: AT&T Bell Laboratories, Reading, USA
- Source:
Volume 23, Issue 23,
5 November 1987,
p.
1222 – 1223
DOI: 10.1049/el:19870851 , Print ISSN 0013-5194, Online ISSN 1350-911X
Improved uniformity of threshold voltage is shown for MESFETs fabricated on GaAs substrates grown by a novel vertical gradient freeze technique when compared to devices fabricated on LEC GaAs substrates. The improved uniformity is most likely related to the decreased dislocation density and reduced impurity clustering in the VGF material.
Inspec keywords: crystal growth from melt; gallium arsenide; semiconductor growth; III-V semiconductors; Schottky gate field effect transistors
Other keywords:
Subjects: Other field effect devices; Crystal growth
References
-
-
1)
- S. Miyazawa , R. Honda , Y. Ishii , E. Ishida . Improvement of crystal homogeneities in liquid-encapsulated Czochralski grown, semi-insulating GaAs by heat treatment. Appl. Phys. Lett.
-
2)
- J.E. Clemans , W.A. Gault , E.M. Monberg . The production of high quality, III-V compound semiconductor crystals. AT&T Tech J.
-
3)
- T. Honda , Y. Ishh , S. Miyazawa , H. Yamazahi , Y. Nanism . The influence of dislocation density on the uniformity of electrical properties of Si implanted, semi-insulating LEC-GaAs. Jpn. J. Appl. Phys.
-
4)
- H. Yamazahi , T. Honda , S. Ishida , Y. Kawasaki . Improvement of field-effect transistor threshold voltage uniformity by using very low dislocation density liquid encapsulated Czochralski-grown GaAs. Appl. Phys. Lett.
-
5)
- A.S. Jordan , R. Caruso , A.R. von Neida , J.W. Nielsen . A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals. J. Appl. Phys.
-
6)
- K. Terashima , T. Katsumata , F. Orito , T. Kikuta , T. Fukuda . Electrical resistivity of undoped GaAs single crystals grown by magnetic field applied LEC technique. Jpn. J. Appl. Phys.
-
7)
- H. Kohda , K. Yamada , H. Nakanishi , T. Kobayashi , J. Osaka , K. Hoshikawa . Crystal growth of completely dislocation-free and striation-free GaAs. J. Cryst. Growth
-
8)
- J. Kasahara , M. Arai , N. Watanabe . Threshold voltage uniformity of GaAs-FETs on ingot-annealed substrates. Jpn. J. Appl. Phys.
-
9)
- A. Tamura , T. Onuma . Experimental correlation between EPD and electrical properties in undoped LEC as-grown semi-insulating GaAs crystals. Jpn. J. Appl. Phys.
-
10)
- S. Miyazawa , T. Mizutani , H. Yamazahi . Leakage current IL variation correlated with dislocation density in undoped semi-insulating LEC-GaAs. Jpn. J. Appl. Phys.
-
11)
- W.A. Gault , E.M. Monberg , J.E. Clemans . A novel application of the vertical gradient freeze method to the growth of high quality III-V crystals. J. Cryst. Growth
-
12)
- T. Oboktata , T. Matsumura , K. Terashima , F. Orito , T. Kikuta , T. Fukuda . Improved uniformity of resistivity distribution in LEC semi-insulating GaAs produced by annealing. Jpn. J. Appl. Phys.
-
13)
- Y. Nanishi , S. Ishida , T. Honda , H. Yamazahi , S. Miyazawa . Inhomogeneous GaAs FET threshold voltages related to dislocation distribution. Jpn. J. Appl. Phys.
-
14)
- T. Egawa , Y. Sano , H. Nakamura , T. Ishida , K. Kaminishi . The dependence of threshold voltage scattering of GaAs MESFET on annealing method. Jpn. J. Appl. Phys.
-
15)
- S. Miyazawa , Y. Ishii . Dislocations as the origin of threshold voltage scatterings for GaAs MESFET on LEC-grown semi-insulating GaAs substrate. IEEE Trans.
-
16)
- J. Kasahara , M. Arai , N. Watanabe . Extremely uniform threshold voltage distribution of GaAs FET made on LEC-grown crystals. Electron. Lett. , 1040 - 1042
-
17)
- T. Matsumura , H. Emori , K. Terashima , T. Fukuda . Resistivity, Hall mobility and leakage current variations in undoped semi-insulating GaAs crystal grown by LEC method. Jpn. J. Appl. Phys.
-
1)