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New tungsten silicide thin-film resistor technology applied to GaAs integrated circuits

New tungsten silicide thin-film resistor technology applied to GaAs integrated circuits

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© The Institution of Electrical Engineers
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Tungsten silicide resistors in the range 50–300 ω sheet resistance have been deposited on GaAs by RF sputtering and patterned by etching in an SF6 plasma. High-temperature stability has been demonstrated and a change in resistance of less than 01% after lOOOh at 125°C achieved with passivated resistors.

Inspec keywords: sputter etching; integrated circuit technology; tungsten compounds; gallium arsenide; thin film resistors; field effect integrated circuits; III-V semiconductors; metallisation; sputter deposition

Other keywords: passivated resistors; tungsten silicide thin-film resistor technology; etching; high temperature stability; SF6 plasma; 125 degC; GaAs; 50 to 300 ohm; RF sputtering; WSix technology

Subjects: Other field effect integrated circuits; Thin film circuits; Metallisation and interconnection technology

References

    1. 1)
      • R.S. Pengelly . (1982) , Microwave field-effect transistors—theory, design and applications.
    2. 2)
      • Allan, D., O'Sullivan, P.: `Characterisation of refractory metallisation for self-aligned gate GaAs ESFET technology', Proc. Int. Seminar on Technology for high speed signal processing, 1985,1986, Trondheim, Norway, NTH.
    3. 3)
      • Fraser, A., Ogbonnah, D.: `Reliability investigation of GaAs IC components', Proc. IEEE GaAs IC symposium, 1985, p. 161–164.
    4. 4)
      • Yokoyama, N., Ohnishi, T., Onodera, H., Shinok, T., Shibatomi, A.: `A GaAs Ik static RAM using tungsten silicide gate self-alignment technology', Proc. IEEE ISSC '83, 1983, p. 44–45.
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