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Novel vertical Hall cells in standard bipolar technology

Novel vertical Hall cells in standard bipolar technology

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© The Institution of Electrical Engineers
Published

Novel vertical Hall cells which detect the magnetic field parallel to the chip surface were developed using the standard bipolar technology. In the devices, an n+ buried layer makes a vertical current flow and introduces the sensitivity parallel to the chip surface. A sensitivity of 75 V/AT was measured.

Inspec keywords: Hall effect devices

Other keywords: standard bipolar technology; vertical current flow; magnetic field; sensitivity; vertical Hall cells

Subjects: Bulk effect devices

References

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      • R.S. Popovic . The vertical Hall-effect device. IEEE electron device Lett. , 357 - 358
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      • Maenaka, K., Fujiwara, H., Ohsakama, T., Ishida, M., Nakamura, T., Yoshida, A., Yasuda, Y.: `Integrated vector sensor', Proc. 5th Sensor Symposium, 1985, p. 179–183.
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