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Fully ion-implanted abrupt pn junction on semi-insulating InP

Fully ion-implanted abrupt pn junction on semi-insulating InP

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© The Institution of Electrical Engineers
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We report a fully ion-implanted pn junction using Si for n-implant and P/Be co-implant for a shallow p+ surface layer. C/V measurements indicate abrupt junction behaviour. Mesa diodes were fabricated and showed an ideality factor of two, small leakage current and avalanche breakdown at reverse bias greater than 40 V.

Inspec keywords: semiconductor diodes; III-V semiconductors; p-n homojunctions; indium compounds; ion implantation

Other keywords: InP; ion implanted abrupt p-n junction; ideality factor; shallow p+ surface layer; C-V measurements; leakage current; III-V semiconductor; mesa diodes; avalanche breakdown; InP:P,Be-InP:Si

Subjects: Semiconductor junctions; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Junction and barrier diodes; II-VI and III-V semiconductors; Doping and implantation of impurities; Semiconductor doping

References

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      • W.J. Devlin , K.T. Ip , D.P. Leta , L.F. Eastman , G.H. Morrison , J. Comas . P-N junction formation in InP by Be ion-implantation. Inst. Phys. Conf. Ser. , 510 - 518
    2. 2)
      • Boos, J.B., Weng, T.H., Binari, S.C., Kelner, G., Henry, R.L.: `InP JFETs by shallow Zn diffusion', IEDM Tech. dig., December 1983, p. 625–627.
    3. 3)
      • M. Yamada , P.K. Tien , R.J. Martin , R.E. Nahory , A.A. Ballman . Double Zn diffusion fronts in InP—theory and experiment. Appl. Phys. Lett. , 594 - 596
    4. 4)
      • H. Ando , N. Susa , H. Kanbe . Carrier density profiles in Zn-and Cd-diffused InP. Jpn. J. Appl. Phys. , L197 - L200
    5. 5)
      • J.B. Boos , S.C. Binari , G. Kelner , P.E. Thompson , T.H. Weng , N.A. Pananicolaou , R.L. Henry . Planar fully ion-implanted InP power junction FETs. IEEE Electron Device Lett. , 273 - 276
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