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GaInAsP/InP unstable resonator lasers

GaInAsP/InP unstable resonator lasers

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© The Institution of Electrical Engineers
Published

Double-heterostructure GaInAsP/InP unstable resonator lasers have been fabricated for the first time. Both facets are made by a simple two-step chemical etching process. The required nearly vertical lateral curved cavity mirrors are achieved. The unstable resonator lasers exhibit an output power of 105 mW.

Inspec keywords: indium compounds; gallium arsenide; optical workshop techniques; semiconductor junction lasers; etching; III-V semiconductors; gallium compounds; laser cavity resonators

Other keywords: 105 mW; unstable resonator lasers; two-step chemical etching process; fabrication process; semiconductor lasers; vertical lateral curved cavity mirrors; double heterostructure; GaInAsP-InP

Subjects: Optical fabrication, surface grinding; Design of specific laser systems; Semiconductor lasers; Laser resonators and cavities; Lasing action in semiconductors; Laser resonators and cavities

References

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      • A.E. Siegman . Unstable optical resonator for laser applications. Proc. IEEE , 277 - 287
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      • J. Salzman , T. Venkatesan , R. Lang , M. Mittelstein , A. Yariv . Unstable resonator cavity semiconductor lasers. Appl. Phys. , 218 - 220
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