Electron transport of (Al,Ga)Sb/InAs heterojunctions prepared by molecular beam epitaxy

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Electron transport of (Al,Ga)Sb/InAs heterojunctions prepared by molecular beam epitaxy

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Molecular beam epitaxial growth of (Al,Ga)Sb/InAs hetero-structures is described. Electron transport studies indicate that these heterojunctions are of high quality. Shubnikov-de Haas measurement of the AlSb/InAs/GaSb quantum well shows a two-dimensional electron gas of concentration 2×1012cm2 and a low-temperature mobility approaching 105cm2/Vs. Low-temperature capacitance/voltage measurement indicates that the thin AlSb barrier is a classical Mott-type barrier.

Inspec keywords: molecular beam epitaxial growth; III-V semiconductors; semiconductor growth; electron gas; semiconductor superlattices; aluminium compounds; gallium compounds; carrier mobility; indium compounds

Other keywords: epitaxial growth; electron transport; two-dimensional electron gas; (AlGa)Sb-InAs; classical Mott-type barrier; molecular beam epitaxy; thin AlSb barrier; semiconductor superlattices; low-temperature mobility; AlSb-InAs-GaSb quantum well; capacitance/voltage measurement; Shubnikov-de Haas measurement; (Al, Ga)Sb/InAs heterojunctions

Subjects: Vacuum deposition; Epitaxial growth; Semiconductor junctions; Thin film growth, structure, and epitaxy; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Low-field transport and mobility; piezoresistance (semiconductors/insulators)

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