© The Institution of Electrical Engineers
A GaInP/AlGaInP broad-area (60 × 500 μm2) laser grown by MOCVD has obtained a very low threshold current density Jth of 1.1 kA/cm2. The dependence of Jth and differential quantum efficiency on cavity length was measured to determine internal quantum efficiency, losses and the gain constant, which were found to be comparable to these characteristics in an AlGaAs laser.
References
-
-
1)
-
Isikawa, M., Ohba, Y., Watanabe, Y., Nagasawa, H., Sugawara, H., Yamamoto, M., Hatakoshi, G.: `InGaAlP transverse mode stabilized visible laser diodes fabricated by MOCVD selective growth', Extended abstracts of 18th conference on solid-state devices and materials, 1986, p. 153–156.
-
2)
-
F. Stern
.
Gain-current relation for GaAs lasers with n-type and undoped active layers.
IEEE J. Quantum Electron.
,
290 -
294
-
3)
-
G. Lasher ,
F. Stern
.
Spontaneous and stimulated recombination radiation in semiconductors.
Phys. Rev. A.
,
553 -
563
-
4)
-
M. Ikeda ,
Y. Mori ,
H. Sato ,
K. Kaneko ,
N. Watanabe
.
Room temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition.
Appl. Phys. Lett.
,
1027 -
1028
-
5)
-
K. Kobayashi ,
S. Kawata ,
A. Gomyo ,
I. Hino ,
T. Suzuki
.
Room-temperature CW operation of AlGaInP double-heterostructure visible lasers.
Electron. Lett.
,
931 -
932
-
6)
-
H. Tanaka ,
Y. Kawamura ,
H. Asahi
.
Refractive indices of In0.49Ga0.51−xAlxP lattice matched to GaAs.
J. Appl. Phys.
,
985 -
986
-
7)
-
G.D. Henshall
.
The suppression of internally circulating modes in (GaAl)As/GaAs heterostructure lasers and their effect on catastrophic degradation and efficiency.
Appl. Phys. Lett.
,
205 -
207
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19870632
Related content
content/journals/10.1049/el_19870632
pub_keyword,iet_inspecKeyword,pub_concept
6
6