Effect of photochemical etching on interface state density of Ga0.47In0.53As metal/insulator/semiconductor diodes

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Effect of photochemical etching on interface state density of Ga0.47In0.53As metal/insulator/semiconductor diodes

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A metal/insulator/semiconductor (MIS) structure of Ga0.47In0.53As has been prepared by applying an excimer laser photo-CVD process to depositing an SiNx insulating layer. It is found that interface state densities can be remarkably reduced by in situ photochemical etching with CC14 or CH3Br gases prior to SiNx deposition. A minimum value of the U-shape profile of the interface state density as low as 5 × 1011 cm-2eV-1is attained.

Inspec keywords: semiconductor technology; etching; gallium arsenide; metal-insulator-semiconductor structures; III-V semiconductors; indium compounds

Other keywords: MIS structure; tetrachloromethane; excimer laser photo-CVD process; in situ photochemical etching; SiNx film; Ga0.47In0.53As; bromomethane; SiNx deposition; interface state density

Subjects: II-VI and III-V semiconductors; Surface treatment (semiconductor technology); Surface treatment and degradation in semiconductor technology; Electrical properties of metal-insulator-semiconductor structures; Metal-insulator-semiconductor structures

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